NTDN/D. NTDN, NVDN. Power MOSFET. 30 V, 54 A, Single N− Channel, DPAK/IPAK. Features. • Low RDS(on) to Minimize Conduction Losses. SIDY Transistor Datasheet, SIDY Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. AOC Transistor Datasheet, AOC Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog.

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The devices are suitable for battery pack applications where two n-channel MOSFETs are connected back-to-back for safe charging and discharging as well as voltage protection. Business News Oct 09, Typical Turn-On Delay Time.

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SIDY MOSFET Datasheet pdf – Equivalent. Cross Reference Search

Minimum Gate Threshold Voltage. Maximum Gate Source Voltage. These cookies are required to navigate on our Site.


Maximum Continuous Drain Current. Please enter a message. These cookies are used to gather information about your use of the Site to improve your access to the site and increase its usability.

Save to parts list Save to parts list. Typical Turn-Off Delay Time. Maximum Continuous Drain Current.

The product detailed below complies with the specifications published mosret RS Components. By clicking the accept button below, you agree to the following terms. ST licenses Atomera manufacturing technology. Typical Input Capacitance Vds. RoHS Certificate of Compliance. Save this item to a new parts list. Business News Oct 08, Thank you for your feedback.

Technology News Oct 03, Pay attention, some cookies cannot be removed To cancel some cookies, please follow the procedures on the following links AddThis. When board space is a key mpsfet, AOC provides a great option to further enhance power density.

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High performance common-drain MOSFETs help battery pack designers simplify designs | EETE Analog

Some sharing buttons are integrated via third-party applications that can issue this type of cookies. The AON provides an extra level of protection with an internal temperature sense diode that provides first-hand thermal information to the battery control IC.

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Maximum Drain Source Voltage. Please select an existing parts list. Maximum Drain Source Resistance.

IXTH48N65X2 N-Channel MOSFET, 48 A, 650 V X2-Class, 3-Pin TO-247 IXYS

Save this item to a new parts list. Welsh startup backed to make energy harvest PMIC. Business News Oct 11, Each In a Tube of Each In a Tube of